Optoelectronic and nanosized features of nanostructured porous silicon

This paper considers the optoelectronic properties of porous nanostructured silicon obtained by electrochemical etching method. It was noted that electrolyte concentration affects depth porosity, while anodizing current density and size crystallites, as well photoluminescence spectra. The results Raman measurement showed a low-frequency shift wavenumber on 504 cm-1 line, which changes frequency difference Δω to 16 units, cross-sectional diameter nanocrystallites is distributed from 2.3 nm 4.3 nm.